Back to results
US 2003/0077892 A1Published application
Method for forming aerial metallic wiring on semiconductor substrate
AssigneeKabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.)
InventorsTakao Fujikawa, Tetsuya Yoshikawa
Life of this patent
Estimating the term…
Abstract
A temporary support layer 2 is formed on a semiconductor substrate 1, and the temporary support layer 2 is provided with a hole 4 that reaches the semiconductor substrate 1. The hole 4 is filled in with a conductor material 5, and by pressurizing the conductor material 5, the conductor material 5 and the semiconductor substrate 1 are pressure-bonded. Thereby, an aerial wiring structure whose bonding strength is improved and that has excellent self-sustainability can be obtained.
Claims9
A method of forming an aerial metallic wiring on a semiconductor substrate, comprising:
- forming a temporary support layer on a semiconductor substrate;
- disposing a hole that penetrates through the temporary support layer and reaches the semiconductor substrate in the temporary support layer;
- filling in the hole with a conductor material;
- pressurizing the conductor material, and thereby pressure-bonding the conductor material and the semiconductor substrate;
- and
- removing the temporary support layer, and thereby forming the conductor material into an aerial wiring structure that is self-sustained in a space above the semiconductor substrate.
3 more elements
Dependencies are inferred from the claim text.