Memory cell, wafer, semiconductor component with memory cell and a method for fabricating an insulating collar for a memory

A memory cell, comprising:

• a trench filled with a conductive material;
• a selection transistor;
• a connection connecting said conductive material to said selection transistor, said connection including a vertical insulation collar;
• and
• a lateral insulation collar for said trench;
• said vertical insulation collar connected to said lateral insulation collar;
• and
• said lateral insulation collar essentially extending perpendicular to said vertical insulation collar.

A wafer with at least one memory cell including:

• a trench filled with a conductive material;
• a selection transistor;
• a connection connecting said conductive material to said selection transistor, said connection including a vertical insulation collar;
• and
• a lateral insulation collar for said trench;
• said vertical insulation collar connected to said lateral insulation collar;
• and
• said lateral insulation collar configured laterally with respect to said vertical insulation collar.

A semiconductor component with at least one memory cell including:

• a trench filled with a conductive material;
• a selection transistor;
• a connection connecting said conductive material to said selection transistor, said connection including a vertical insulation collar;
• and
• a lateral insulation collar for said trench;
• said vertical insulation collar connected to said lateral insulation collar;
• and
• said lateral insulation collar configured laterally with respect to said vertical insulation collar.

A method for fabricating a lateral insulation collar for a memory cell, which comprises:

• fabricating a bottle trench and filling the bottle trench near a vertical wall;
• subsequently
• filling an upper, curved region of the bottle trench with an insulator;
• and subsequently
• anisotropically etching the upper region of the bottle trench in order to penetrate through the insulator.