Integrated circuit and manufacturing method therefor
AssigneeNEC Electronics Corporation
InventorsHiroaki Ohkubo, Yasutaka Nakashiba
Life of this patent
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Abstract
An integrated circuit is manufactured by providing a P− or P−− type semiconductor substrate with a resistivity of 10 to 1000 Ω·cm, disposing a CMOS on top of the semiconductor substrate, depositing an insulating film with several wirings embedded therein over the CMOS, and disposing an inductor on top of the insulating film in a region that is apart from where the CMOS is positioned. A p+ type diffused layer with a resistivity of about 0.01 Ω·cm is disposed between the semiconductor substrate and the CMOS.
Claims17
An integrated circuit comprising:
- a semiconductor substrate of a first conductivity type having an active device region and an inductor region that is apart from said active device region;
- a semiconductor layer of said first conductivity type disposed on said semiconductor substrate, said semiconductor layer having a lower resistivity than said semiconductor substrate;
- an active device disposed on a surface of said semiconductor layer in said active device region;
- an insulating film disposed on said semiconductor layer so as to cover said active device;
- an inductor disposed on said insulating film in said inductor region;
- and
- a first layer of the first conductivity type locally disposed between said semiconductor layer and said semiconductor substrate in said active device region, said first layer having a lower resistivity than said semiconductor layer.
A manufacturing method for an integrated circuit, comprising the steps of:
- locally forming a first layer of a first conductivity type on a semiconductor substrate of the first conductivity type in an active device region of said semiconductor substrate, said first layer having a lower resistivity than said semiconductor substrate;
- depositing a semiconductor layer of the first conductivity type over said semiconductor substrate and said first layer, said semiconductor layer having a resistivity lower than that of said semiconductor substrate but higher than that of said first layer;
- disposing an active device on the surface of said semiconductor layer in an active device region;
- depositing an insulating film over said active device;
- and
- disposing an inductor on said insulating film in an inductor region that is apart from said active device region.
A manufacturing method for an integrated circuit, comprising the steps of:
- forming a second layer of a first conductivity type on a semiconductor substrate of the first conductivity type, said second layer having a lower resistivity than said semiconductor substrate;
- locally implanting impurities of the first conductivity type into an active device region of said second layer to cause a part of said second layer to become a first layer of the first conductivity type, said first layer having a lower resistivity than said second layer;
- depositing a semiconductor layer of the first conductivity type over said first layer and said second layer, said semiconductor layer having a resistivity lower than that of said semiconductor substrate but higher than that of said second layer;
- disposing an active device on the surface of said semiconductor layer in said active device region;
- depositing an insulating film over said active device;
- and
- disposing an inductor on said insulating film in an inductor region of said second layer that is apart from said active device region.
Dependencies are inferred from the claim text.