Single transistor type magnetic random access memory device and method of operating and manufacturing the same

A method of operating a single transistor type magnetic random access memory device, the method comprising:

• (a) applying current Ix to bit lines for addressing, applying current Iy to word lines, making magnetized directions of magnetic layers of a magnetic tunnel junction in an anti-parallel direction, forming a resistance R1, and writing data “1” at a selected memory cell;
• (b) applying current Ix to the bit lines for addressing, applying current −Iy in a direction opposite to the current Iy to the word lines, making the magnetized directions of the magnetic layers of the magnetic tunnel junction in a parallel direction, forming a resistance R0, and writing data “0” at a selected memory cell;
• and
• (c) applying a voltage Vds to the bit lines, applying a voltage Vin to the word lines, sensing channel current flowing from a drain that is a first doped region to a source that is a second doped region, and reading the data stored at the step (a) or (b).

A method of manufacturing a single transistor type magnetic random access memory device, the method comprising:

• (a) sequentially forming a gate dielectric layer and magnetic tunnel junction forming layers on a substrate;
• (b) forming a first insulating layer to cover the resultant layers of (a) on the substrate;
• (c) exposing an upper portion of the magnetic tunnel junction;
• (d) forming a word line on the exposed portion of the magnetic tunnel junction;
• (e) forming a second insulating layer on the first insulating layer to cover the word line;
• (f) forming a source and a drain by implanting dopants into portions of the substrate at both sides of the magnetic tunnel junction and the word line;
• (h) forming a third insulating layer, on the second insulating layer, which contacts the source and the drain and covers the stacked layers between the source and the drain;
• and
• (i) forming a bit line, on the third insulating layer, which contacts the drain.