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AssigneeMicron Technology, Inc.
InventorsAmmar Derraa, Sujit Sharan, Paul Castrovillo
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Conductive contacts in a semiconductor structure, and methods for forming the conductive components are provided. The contacts are useful for providing electrical connection to active components beneath an insulation layer in integrated circuits such as memory devices. The conductive contacts comprise boron-doped TiCl4-based titanium nitride, and possess a sufficient level adhesion to the insulative layer to eliminate peeling from the sidewalls of the contact opening and cracking of the insulative layer when formed to a thickness of greater than about 200 angstroms.
A method of forming a conductive contact in a semiconductor device comprising an opening through an insulative layer, the opening having sidewalls and extending to an underlying silicon-comprising substrate, the method comprising the steps of:
A method of forming a conductive component in a semiconductor device, comprising the steps of:
A method of forming a conductive contact in an opening within a semiconductor device, the opening formed in an insulative layer and extending to an underlying silicon-comprising substrate, the method comprising the steps of:
A method of forming a conductive contact in an opening within a semiconductor device, the opening formed in an insulative layer and extending to an underlying silicon-comprising substrate, the opening defined by sidewalls and a bottom portion;
A method of forming a conductive contact in an opening within a semiconductor device, the opening formed in an insulative layer and extending to an underlying silicon-comprising substrate, the opening having sidewalls, the method comprising the steps of:
A method of forming a conductive contact in an opening within a semiconductor device, the opening formed in an insulative layer and extending to an underlying silicon-comprising substrate, the opening having sidewalls, the method comprising the steps of:
A method of forming a conductive contact in an opening within a semiconductor device, the opening formed in an insulative layer and extending to an underlying silicon-comprising substrate, the opening having sidewalls, the method comprising the steps of:
A method of forming a conductive contact in an opening within a semiconductor device, the opening formed in an insulative layer and extending to an underlying silicon-comprising substrate, the method comprising the steps of:
A method of forming a conductive contact within a high aspect ratio opening, comprising the steps of:
A method of forming a conductive component in a semiconductor device, comprising the steps of:
A method of forming a conductive component in a semiconductor device, the device comprising a silicon-comprising substrate with an overlying insulative layer having at least one opening formed therethrough to expose the substrate, comprising the steps of:
A method of forming a conductive contact within a high aspect ratio opening through an insulative layer to an underlying silicon-comprising substrate, the opening having sidewalls, the method comprising the steps of:
A method of forming a semiconductor device, comprising the steps of:
A method of forming a conductive contact in a semiconductor device comprising an opening through an insulative layer, the opening having sidewalls and extending to an underlying silicon-comprising substrate, the method comprising the steps of:
A method of forming a conductive contact in a semiconductor device comprising an opening through an insulative layer, the opening having sidewalls and extending to an underlying silicon-comprising substrate, the method comprising the steps of:
A method of forming a conductive component in a semiconductor device, comprising the steps of:
A method of forming a conductive contact in an opening within a semiconductor device, the opening formed in an insulative layer and extending to an underlying silicon-comprising substrate, the opening having sidewalls, the method comprising the steps of:
A method of forming a conductive contact in an opening within a semiconductor device, the opening formed in an insulative layer and extending to an underlying silicon-comprising substrate, the opening having sidewalls, the method comprising the steps of:
A method of forming a conductive contact in an opening within a semiconductor device, the opening formed in an insulative layer and extending to an underlying silicon-comprising substrate, the opening having sidewalls, the method comprising the steps of:
A method of forming a conductive contact in an opening within a semiconductor device, the opening formed in an insulative layer and extending to an underlying silicon-comprising substrate, the opening having sidewalls, the method comprising the steps of:
A method of forming a conductive contact in an opening within a semiconductor device, the opening formed in an insulative layer and extending to an underlying silicon-comprising substrate, the method comprising the steps of:
A method of forming a conductive contact within a high aspect ratio opening, comprising the steps of:
A method of forming a conductive component in a semiconductor device, comprising the steps of:
A method of forming a conductive component in a semiconductor device, the device comprising a silicon-comprising substrate with an overlying insulative layer having at least one opening formed therethrough to expose the substrate, comprising the steps of:
A method of forming a conductive contact in an opening within a semiconductor device, the opening formed in an insulative layer to an underlying silicon-comprising substrate, the opening having sidewalls;
A method of forming a conductive contact in an opening within a semiconductor device, the opening formed in an insulative layer and extending to an underlying silicon-comprising substrate, the opening defined by sidewalls, the method comprising the steps of:
A method of forming a conductive contact in an opening within a semiconductor device, the opening formed in an insulative layer and extending to an underlying silicon-comprising substrate, the method comprising the steps of:
A method of forming a conductive contact within a high aspect ratio opening through an insulative layer to an underlying silicon-comprising substrate, the opening having sidewalls, the method comprising the steps of:
A method of forming a semiconductor device, comprising the steps of:
A method for filling high aspect ratio contact openings, comprising the steps of:
A conductive contact comprising boron-doped titanium nitride, and disposed within a contact opening extending through an insulative layer to an underlying silicon-comprising substrate of a semiconductor device;
A conductive contact of a semiconductor device, the conductive contact disposed within an opening having sidewalls and extending through an insulative layer to an underlying silicon-comprising substrate, the conductive contact comprising boron-doped titanium nitride overlying a layer of titanium silicide disposed on the silicon-comprising substrate, and an amount of boron effective to provide the conductive contact with a level of adhesion to the insulative layer within the opening to substantially eliminate peeling of the conductive contact from the sidewalls of the opening, and a level of thermal stress to substantially eliminate cracking of the insulative layer;
A conductive contact of a semiconductor device, the conductive contact disposed within an opening having sidewalls and extending through an insulative layer to an underlying silicon-comprising substrate, the conductive contact comprising boron-doped titanium nitride overlying a layer of titanium silicide deposited onto the silicon-comprising substrate, and having a thickness of at least about 200 angstroms, the conductive contact adhered to the sidewalls of the opening with substantially no peeling from the sidewalls and no cracking of the insulative layer.
A conductive contact of a semiconductor device, the conductive contact disposed within an opening having sidewalls and extending through an insulative layer to an underlying silicon-comprising substrate, a layer of titanium silicide overlying the silicon-comprising substrate;
A conductive contact of a semiconductor device, the conductive contact disposed within an opening having sidewalls and extending through an insulative layer to an underlying silicon-comprising substrate, a layer of titanium silicide overlying the silicon-comprising substrate;
A semiconductor circuit, comprising:
A semiconductor circuit, comprising:
A semiconductor circuit, comprising:
A semiconductor circuit, comprising:
An integrated circuit memory device, comprising:
An integrated circuit memory device, comprising:
Dependencies are inferred from the claim text.