Mask pattern generating method and manufacturing method of semiconductor apparatus

A mask pattern generation method of generating mask patterns from designed patterns, comprising:

• preparing a correction library in which a plurality of pairs of an edge coordinate group and a correction value group to correct the edge coordinate group are registered;
• acquiring first edge coordinate groups from said first designed patterns;
• checking whether or not an edge coordinate group agreeing with the first edge coordinate group is registered in said correction library;
• calculating the correction value group to correct the first edge coordinate group by simulation based on a first correction parameter, when the edge coordinate group is not registered;
• registering a pair of the calculated correction value group and the first edge coordinate group into said correction library;
• reading the corresponding correction value group from said correction library, when the edge coordinate group is registered;
• correcting the first designed pattern in accordance with the calculated correction value group or the read correction value group, to generate the first mask pattern;
• acquiring second edge coordinate groups of a second designed pattern different from the first designed pattern;
• checking whether or not the edge coordinate group agreeing with the second edge coordinate group is registered in said correction library;
• calculating the correction value group with respect to the second edge coordinate group by the simulation based on a second correction parameter, when the edge coordinate group is not registered;
• registering a pair of the calculated correction value group and second edge coordinate group into said correction library;
• reading the corresponding correction value group from the correction library, when the edge coordinate group is registered;
• and
• correcting the second designed pattern in accordance with the calculated correction value group or the read correction value group, to generating a second mask pattern.

A mask pattern generation method of generating a mask pattern from a designed pattern, comprising:

• preparing the designed pattern;
• preparing a correction parameter;
• preparing a first correction library in which a plurality of pairs of an edge coordinate group and a correction value group to correct the edge coordinate group is registered;
• acquiring edge coordinate groups of said designed patterns;
• generating a second correction library in which only the plurality of pairs of an edge coordinate group agreeing with said acquired edge coordinate group and the correction value group is registered in the first correction library and simulation using said correction parameter;
• and
• correcting the designed pattern using said second correction library.