Method for correcting characteristics of attenuated phase-shift mask
AssigneeOki Electric Industry Co., Ltd.
InventorKatsuhiro Takushima
Life of this patent
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Abstract
A method for correcting characteristics of an attenuated phase-shift mask having an attenuated layer including (a) storing a data in a memory, which shows a correlation between characteristics and process conditions, (b) measuring the characteristics of the attenuated phase-shift mask, (c) calculating a appropriate process condition from the result of the step (b) and the data stored in the memory; and (d) soaking the attenuated phase-shift mask into a liquid solution for a certain time-that is calculated in the step (c) to change thickness and composition of the attenuated layer.
Claims20
A method for correcting characteristics of an attenuated phase-shift mask having an attenuated layer, comprising:
- (a) storing a data in a memory, which shows a correlation between characteristics and process conditions;
- (b) measuring the characteristics of the attenuated phase-shift mask;
- (c) calculating a appropriate process condition from the result of the step (b) and the data stored in the memory;
- and
- (d) soaking the attenuated phase-shift mask into a liquid solution for a certain time that is calculated in the step (c) to change thickness and composition of the attenuated layer.
A method for correcting characteristics of an attenuated phase-shift mask having an attenuated layer formed on a glass substrate, comprising:
- (a) storing a data in a memory, which shows a correlation between characteristics and process conditions;,
- (b) measuring the characteristics of the attenuated phase-shift mask;
- (c) calculating a appropriate process condition from the result of step (b) and the data stored in the memory;
- (d) forming a resist layer on the substrate and the attenuated layer;
- (e) removing parts of the resist layer on an area where the characteristic of the attenuated layer to be corrected is located due to exposed the surface of the attenuated layer;
- (f) heating the attenuated phase-shift mask upto the certain temperature that is calculated in the step (c);
- and
- (g) dropping a liquid solution onto the attenuated phase-shift mask for a certain time is calculated in the step (c) to change thickness and composition of the attenuated layer.
A method for correcting characteristics of an attenuated phase-shift mask having an attenuated layer formed on a glass substrate, comprising;
- (a) storing a data in a memory, which shows a correlation between characteristics and process conditions;
- (b) measuring the characteristics of the attenuated phase-shift mask;
- (c) calculating a appropriate process condition from the result of step (b) and the data stored in the memory;
- (d) placing and holding the attenuated phase-shift mask on a spin chuck;
- (e) rotating the spin chuck by a motor;
- and
- (f) dropping a liquid solution onto the attenuated phase-shift mask for a certain time is calculated in the step (c) to change thickness and composition of the attenuated layer;
- (g) whereby the characteristic of the attenuated phase-shift mask is corrected concentrically.
A method for correcting characteristics of an attenuated phase-shift mask having an attenuated layer formed on a glass substrate, comprising:
- (a) storing a data in a memory, which shows a correlation between phase difference characteristic and process conditions;
- (b) measuring phase difference characteristic of the attenuated phase-shift mask;
- (c) calculating a appropriate process condition from the result of step (b) and the data stored in the memory;
- (d) forming a conductive layer and a resist layer thereon on the substrate and the attenuated layer;
- (e) removing parts of the conductive layer and the resist layer on an area where the phase of the substrate to be corrected is located due to exposed the surface of the substrate;
- and
- (f) etching the substrate for a certain time is calculated in the step (c) to change thickness of the substrate.
Dependencies are inferred from the claim text.