Methods of providing an interlevel dielectric layer intermediate different elevation conductive metal layers in the fabrication of integrated circuitry

A method of providing an interlevel dielectric layer intermediate different elevation conductive layers in the fabrication of integrated circuitry, the method comprising:

• forming a first insulating dielectric mass over at least partially fabricated circuit devices over a substrate;
• forming a first conductive interconnect layer supported by the first insulating dielectric mass;
• forming a second insulating dielectric mass over the first conductive interconnect layer, the second insulating dielectric mass having a first dielectric constant;
• forming a second conductive interconnect layer supported by the second insulating dielectric mass;
• etching at least a portion of the second insulating dielectric mass away from the substrate;
• and
• after the etching, depositing an interlevel dielectric layer to replace at least some of the etched second insulating dielectric material, the interlevel dielectric layer having a second dielectric constant which is less than the first dielectric constant.

A method of providing an interlevel dielectric layer intermediate different elevation conductive layers in the fabrication of integrated circuitry, the method comprising:

• forming a first insulating dielectric mass over at least partially fabricated circuit devices over a substrate;
• forming a first conductive interconnect line supported by the first insulating dielectric mass;
• forming a second insulating dielectric mass over the first conductive interconnect line, the second insulating dielectric mass having a first dielectric constant;
• forming a second conductive interconnect line supported by the second insulating dielectric mass;
• etching a majority of the second insulating dielectric mass away from the substrate substantially selectively relative to the first and second conductive interconnect lines and substantially selectively relative to the first insulative dielectric mass, the etching exposing the first conductive interconnect line and the first insulating dielectric mass;
• and
• after the etching, depositing an interlevel dielectric layer to replace at least some of the etched second insulating dielectric material, the interlevel dielectric layer having a second dielectric constant which is less than the first dielectric constant.