Phase shift mask, method of exposure, and method of producing semiconductor device

A method of exposure performing a first exposure via a phase shift mask comprising:

• a first phase shifter through which light passes by a first optical path length;
• a second phase shifter through which light passes by a second optical path length inverted in an optical phase from the first optical path length, the second phase shifter formed away from the first phase shifter by a predetermined distance;
• a light-blocking part formed around the first phase shifter and second phase shifter;
• and
• a correction pattern provided at a part of at least one of the first phase shifter and second phase shifter for correcting a distribution of light intensity between light passing through the first phase shifter and light passing through the second phase shifter.

A method of producing a semiconductor device including a step of focusing light on a substrate via a phase shift mask to transfer a pattern to the substrate, said phase shift mask comprising:

• a first phase shifter through which light passes by a first optical path length;
• a second phase shifter through which light passes by a second optical path length inverted in an optical phase from the first optical path length, the second phase shifter formed away from the first phase shifter by a predetermined distance;
• a light-blocking part formed around the first phase shifter and second phase shifter;
• and
• a correction pattern provided at a part of at least one of the first phase shifter and second phase shifter for correcting a distribution of light intensity between light passing through the first phase shifter and light passing through the second phase shifter.