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US 2002/0177049 A1Published application
Phase-shifting mask and method of fabricating the same
AssigneeNEC Corporation
InventorHaruo Iwasaki
Life of this patent
Estimating the term…
Abstract
A phase-shifting mask includes (a) a substrate, (b) a light-shielding film formed on the substrate and having a plurality of first openings and a plurality of second openings, and (c) a phase-shifter formed on the substrate only in the first opening of the light-shielding film.
Claims20
A phase-shifting mask comprising:
- (a) a substrate;
- (b) a light-shielding film formed on said substrate and having at least one first opening and at least one second opening;
- and
- (c) a phase-shifter formed on said substrate only in said first opening of said light-shielding film.
1 more element
A phase-shifting mask comprising:
- (a) a substrate;
- (b) a light-shielding film formed on said substrate and having at least one opening;
- and
- (c) a phase-shifter formed on said substrate in said opening of said light-shielding film.
1 more element
A method of fabricating a phase-shifting mask, comprising the steps of:
- (a) forming a light-shielding film on a substrate such that said light-shielding film has at least one first opening and at least one second opening, and
- (b) forming a phase-shifter on said substrate only in said first opening of said light-shielding film.
A method of fabricating a phase-shifting mask, comprising the steps of:
- (a) forming a light-shielding film on a substrate such that said light-shielding film has at least one opening;
- and
- (b) forming a phase-shifter on said substrate in said opening of said light. shielding film.
A method of fabricating a phase-shifting mask, comprising the steps of:
- (a) forming a light-shielding film on a substrate such that said light-shielding film has at least one first opening and at least one second opening;
- (b) depositing silicon dioxide over said light-shielding film;,
- (c) wet-etching said silicon dioxide for removal until said light-shielding film is exposed;
- and
- (d) wet-etching said silicon dioxide for removal out of said second opening.
2 more elements
A method of fabricating a phase-shifting mask, comprising the steps of:
- (a) forming a light-shielding film on a substrate such that said light-shielding film has at least one opening;
- (b) depositing silicon dioxide over said light-shielding film;
- (c) wet-etching said silicon dioxide for removal until said light-shielding film is exposed;
- and
- (d) wet-etching said silicon dioxide for removal out of said opening.
2 more elements
Dependencies are inferred from the claim text.