Method for manufacturing a silicon wafer

Abstract

With the previously known methods for manufacturing a silicon wafer with an insulating intermediate layer, especially in the case of a thicker silicon layer lying upon the insulating intermediate layer, great expenditure is required in order to create a layer with the quality and surface required for producing integrated circuits. According to the new method for manufacturing a silicon wafer with an insulating intermediate layer, the expenditure is reduced to the greatest possible extent by bonding the surface of a first wafer, which has an insulating intermediate layer, to the surface of a second wafer, and removing the substrate layer and the insulating intermediate layer of the first wafer. The new surface created in this manner has a high layer quality which substantially reduces the expenditure.

Dependencies are inferred from the claim text.