Semiconductor device with SOI structure and method of manufacturing the same

A method of manufacturing a semiconductor device, comprising the steps of:

• (a) forming at least a desired element in a device forming region of a conductive semiconductor substrate on a chip in which said semiconductor substrate is formed on a conductive support substrate through a first insulating film;
• (b) forming trenches which pass through said semiconductor substrate to said first insulating film;
• (c) forming a second insulating film on said semiconductor substrate to fill said trenches and to cover a side wall of a substrate contact region;
• (d) forming element contact holes for said element to pass through said second insulating film;
• (e) forming a contact hole section in said substrate hole region to pass through said first and second insulting films to said support substrate;
• (f) filling said element contact hole with first conductive material;
• (g) filling said contact hole section with second conductive material;
• (h) forming a conductive film connected to said contact hole section;
• and
• (i) forming an external connection electrode connected to said conductive film.