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US 2002/0171080 A1Published application
Thin films and production methods thereof
AssigneeReveo, Inc.
InventorSadeg M. Faris
Life of this patent
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Abstract
A layered structure generally includes a first layer suitable for having a useful element formed therein or thereon selectively attached or bonded to a second layer. A method to form a layered structure generally comprises selectively adhering a first substrate to a second substrate.
Claims45
A structure comprising:
- a first layer selectively bonded to a second layer, wherein selective bonding includes at least one region of strong bonding and at least one region of weak bonding at the interface of the first layer and the second layer, wherein a surface of the first layer at the region of weak bonding is in condition for forming a useful device therein or thereon, and further wherein a bond strength ratio of a bond strength at the region of strong bonding to a bond strength at the region of weak bonding is greater than 1.
A method of making a layered structure comprising:
- providing a first layer and a second layer;
- treating regions of the first layer, the second layer, or both the first layer and the second layer for weak bonding;
- and
- bonding the first and second layers.
1 more element
A method of making a layered structure comprising:
- providing a first layer and a second layer;
- treating regions of the first layer, the second layer, or both the first layer and the second layer for strong bonding;
- and
- bonding the first and second layers.
1 more element
A method of making a layered structure comprising:
- selectively adhering a first layer to a second layer.
A semiconductor device comprising
- a first semiconductor substrate having a useful structure therein or thereupon selectively attached to a second support substrate.
Dependencies are inferred from the claim text.