Method for forming nitride read only memory

A method for programming a read only memory, the method comprising:

• providing a semiconductor substrate having a source/drain region therein, wherein said source/drain region is separated at a channel from each other;
• forming a first isolated layer on said semiconductor substrate;
• forming a charge strapping layer on said first isolated layer;
• forming a second isolated layer on said charge strapping layer;
• forming a conductive layer on said second isolated layer;
• forming and defining a photoresist layer on said conductive layer that is located on source/drain region to expose a partial surface of said conductive layer that is located on said channel;
• irradiating said channel with a light having an energy about 3 eV to 9 eV for activating electrons by said photoresist layer as a mask to program said read only memory;
• and
• removing said photoresist layer on said conductive layer.

A method for programming a nitride read only memory, the method comprising:

• providing a semiconductor substrate having a first conductivity;
• forming a plurality of source/drain regions having a second conductivity in said semiconductor substrate, wherein said plurality of source/drain regions are separated at a plurality of channels from each other;
• depositing a first oxide layer on said semiconductor substrate to form a first isolated layer;
• depositing a nitride layer on said first oxide layer to form a charge strapping layer;
• depositing a second oxide layer on said nitride layer to form a second isolated layer;
• depositing a polysilicon layer on said second oxide layer to form a conductive layer;
• defining a plurality of photoresist layers on said polysilicon layer that are located on said plurality of source/drain regions and exposing a portion surface of said polysilicon layer that are located on said plurality of channels to form a plurality of predetermined regions for programming;
• irradiating said plurality of predetermined regions for programming with an ultraviolet light by said plurality of photoresist layers as masks to program said nitride read only memory;
• and
• removing said plurality of photoresist layers on said polysilicon layer to form said nitride read only memory.