Integrated circuit devices with high and low voltage components and processes for manufacturing these devices

A method of manufacturing an integrated circuit device, comprising:

• providing a substrate with a first transistor gate and a second transistor gate therealong, the first gate including a first dielectric pad on the substrate and a first member positioned on the first pad, the second gate including a second dielectric pad on the substrate and a second member on the second pad, the second member being doped with a dopant of a first conductivity type;
• and
• doping the first member and the second member with a dopant of a second conductivity type opposite the first conductivity type, said doping providing the first member with a different doping level than the second member, the different level corresponding to a different threshold voltage for the first gate relative to the second gate.

An integrated circuit device comprising a plurality of components formed along a substrate, said components including:

• a first transistor including a first gate member doped to establish a first operating voltage;
• and
• a second transistor including a second gate member doped to establish a second operating voltage, said second gate member including at least two dopants to establish a predetermined difference between said first voltage and said second voltage, one of said dopants being of a first conductivity type and another of said dopants being of a second conductivity type opposite said first conductivity type.