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US 2002/0164424 A1Published application
Method for fabricating N-type doped polycrystalline silicon
OwnerChih Yuan Huang, Chin Hsiang Lininventors
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Abstract
A method for fabricating N-type doped polycrystalline silicon. A reactive gas source is introduced into a gas deposition reaction chamber and a chemical vapor deposition process is performed to form an N-type doped polycrystalline film.
Claims14
A method for fabricating N-type doped polycrystalline silicon, comprising:
- providing a wafer;
- placing the wafer in a reaction chamber;
- introducing a reaction gas source, an N-type doped gas source and a gas source of a catalyst into the reaction chamber;
- and
- performing a chemical vapor deposition process to form an N-type doped polycrystalline silicon film.
2 more elements
A method for fabricating N-type doped polycrystalline silicon, comprising:
- providing a wafer;
- placing the wafer in a reaction chamber;
- introducing silane containing chlorine, PH3 and B2H6 as gas source into the reaction chamber for increasing deposition rate, wherein an amount of B2H6 is lower than that of the PH3;
- and
- performing a chemical vapor deposition process to form a N-type doped polycrystalline silicon film.
2 more elements
A method for fabricating N-type doped polycrystalline silicon, comprising:
- providing a wafer,
- placing the wafer in a reaction chamber,
- introducing silane containing chlorine and a catalyst as a gas source into the reaction chamber to increase rate of deposition;
- performing a chemical vapor deposition process to form a polycrystalline film;
- and
- performing an N-type dopant implantation process to form an N-type doped polycrystalline silicon film.
3 more elements
Dependencies are inferred from the claim text.