Microstructure devices, methods of forming a microstructure device and a method of forming a MEMS device

A microstructure device comprising:

• a semiconductive substrate;
• a microstructure device feature coupled with the semiconductive substrate, and wherein at least a portion of the microstructure device feature is configured to move relative to the semiconductive substrate;
• and
• a titanium nitride structure coupled with at least a portion of the microstructure device feature.

A microstructure device comprising:

• a semiconductive substrate having a sidewall;
• a microstructure device feature having a sidewall adjacent to and spaced from the sidewall of the semiconductive substrate, and wherein at least a portion of the microstructure device feature is configured to move relative to the semiconductive substrate;
• and
• opposing conductive electrodes individually provided directly upon one of the sidewall of the semiconductive substrate and the sidewall of the microstructure device feature to form a capacitor.

A method of forming a microstructure device comprising:

• forming a monolithic microstructure device feature coupled with a semiconductive substrate;
• providing a conductive structure directly upon at least a portion of the microstructure device feature;
• and
• releasing the microstructure device feature from the semiconductive substrate.

A method of forming a microstructure device comprising:

• forming a microstructure device feature coupled with a semiconductive substrate;
• depositing a conductive structure upon at least a portion of the microstructure device feature using chemical vapor deposition;
• and
• releasing at least a portion of the microstructure device feature from the semiconductive substrate.

A method of forming a microstructure device comprising:

• providing a semiconductive substrate;
• forming a microstructure device feature using the semiconductive substrate and comprising material of the semiconductive substrate;
• providing a conductive structure directly upon at least a portion of the semiconductive material of the microstructure device feature;
• and
• releasing the microstructure device feature from the semiconductive substrate.

A method of forming a microstructure device comprising:

• forming a plurality of trenches within a semiconductive substrate to define a microstructure device feature, the semiconductive substrate and the microstructure device feature having opposing sidewalls;
• forming respective conductive structures directly upon respective portions of the opposing sidewalls of the semiconductive substrate and the microstructure device feature;
• and
• undercutting at least a portion of the microstructure device feature to release the portion of the microstructure device feature from the substrate to permit the portion of the microstructure to move relative to the substrate.

A method of forming a MEMS device comprising:

• providing a semiconductive substrate;
• forming plural trenches having bottom surfaces within the semiconductive substrate to define a MEMS device feature between the trenches, the semiconductive substrate and the microstructure device feature having opposing sidewalls;
• depositing a titanium nitride layer using chemical vapor deposition upon at least a portion of an upper surface of the semiconductive substrate, upon the opposing sidewalls of the semiconductive substrate and the microstructure device feature to form capacitor electrodes, and upon the bottom surfaces;
• removing the titanium nitride layer upon the bottom surfaces of the trenches;
• and
• undercutting at least a portion of the microstructure device feature to release the portion of the microstructure device feature from the substrate to permit the portion of the microstructure device feature to move relative to the substrate.