US 2002/0158246 A1 · Semiconductor device and manufacturing method for the same

Abstract

An -type semiconductor layer with a low impurity concentration is grown by epitaxial growth on top of an -type semiconductor substrate. An oxide film, with a desired pattern, is formed on the surface of the semiconductor layer. Using the oxide film as a mask, an active region edge and a guard ring region are formed by ion injection. After formation, the portion that forms the active region is exposed, and a paste containing platinum is coated onto the back surface of semiconductor substrate. The platinum is heat diffused into the substrate. Through this process, a region near the surface of the active region of semiconductor layer reverses to a P-type, and a shallow reverse region is formed, thereby producing a fast diode with adequate soft recovery characteristics.

Claims16

Dependent claims

A semiconductor device, comprising:

a semiconductor region of a first conductive type;
a reverse region of a second conductive type selected in a first surface of said semiconductor region;
said reverse region being a platinum doped region;
said platinum doping in said reverse region being at a higher concentration near said first surface of said semiconductor region than in an interior portion of said semiconductor region;
and
said semiconductor region and said reverse region forming a pn junction.

3 more elements

A manufacturing method for a semiconductor device, comprising the steps of:

covering at least a first portion on a first main surface of a semiconductor region with a oxide film, and said semiconductor region being a first conductive type;
injecting impurity ions of a second conductive type into at least a first selected section of said semiconductor region using said oxide film covering said first portion as a mask;
heat treating said semiconductor region receiving said impurity ions, and forming at least one impurity diffusion region of said second conductive type and covering said first main surface with said oxide film;
removing said oxide film from said first surface to form an exposed portion surrounding said at least one impurity diffusion region;
forming a reverse region of said second conductive type in a region surrounded by said impurity diffusion region selected in said first main surface of said semiconductor region by doping with platinum, and said doping with platinum forming a higher platinum concentration nearer said first main surface than in an interior portion of said semiconductor region;
forming a first electrode on said reverse region, said first electrode being in electrical connection with said reverse region;
and
forming a second electrode on a second main surface of said semiconductor region, said second electrode being in electrical connection with said second main surface.

5 more elements

Dependencies are inferred from the claim text.

Semiconductor device and manufacturing method for the same

Life of this patent

Semiconductor device and manufacturing method for the same

Life of this patent

Abstract

Claims16