Substrate processing method and substrate processing apparatus
AssigneeTokyo Electron Limited
InventorsKei Miyazaki, Yuichiro Uchihama, Kenji Yasuda, Kiminari Sakaguchi, Shinji Nagashima
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AssigneeTokyo Electron Limited
InventorsKei Miyazaki, Yuichiro Uchihama, Kenji Yasuda, Kiminari Sakaguchi, Shinji Nagashima
Estimating the term…
Processing of applying ultraviolet rays to a front face of an insulating film material formed on a wafer W is performed, whereby a contact angle of the front face thereof becomes smaller. Accordingly, when an insulating film material is applied on the aforesaid front face, the material smoothly spreads, and projections and depressions never occur on a front face of an upper layer insulating film material. Thereby, it is possible to form the insulating film thick and flatter on a substrate.
A substrate processing method, comprising the steps of:
A substrate processing method, comprising the steps of:
A substrate processing method, comprising the steps of:
A substrate processing apparatus, comprising:
A substrate processing apparatus, comprising:
A substrate processing apparatus, comprising:
A substrate processing apparatus, comprising:
Dependencies are inferred from the claim text.