Back to results
US 2002/0119672 A1Published application
Post-etching cleaning process in dual damascene structure manufacturing
OwnerChih-Ning Wu, Sun-Chieh Chieninventors
Life of this patent
Estimating the term…
Abstract
A post-etching cleaning method for removing high molecular weight compounds formed after an etching operation. After a dual damascene opening is formed by etching a dielectric layer over a substrate, a two-stage wet cleaning operation is conducted. In the first wet cleaning, a cleaning solution is used to wash the substrate. The cleaning solution contains hydrogen peroxide and benzotriazole. In the second wet cleaning, inorganic acid solution is used.
Claims20
A post-etching cleaning method for forming a dual damascene structure, comprising the steps of:
- providing a substrate having a metallic layer therein and a dielectric layer and a cap layer over the substrate, wherein a dual damascene opening that exposes the metallic layer is also etched in the dielectric layer and the cap layer;
- performing a first wet etching using a cleaning solution that contains hydrogen peroxide and benzotriazole;
- and
- performing a second wet etching using a cleaning solution that includes diluted hydrofluoric acid.
1 more element
A post-etching cleaning method, comprising the steps of:
- providing a substrate having a metallic layer therein and a dielectric layer and a cap layer over the substrate, wherein an opening that exposes the metallic layer is also etched in the dielectric layer and the cap layer;
- performing a first wet etching using a cleaning solution that contains an oxidizing agent and a testing agent, wherein the testing agent serves to reduce the oxidation between the oxidizing agent and the metallic layer;
- and
- performing a second wet etching using a cleaning solution that includes inorganic acid solution.
1 more element
Dependencies are inferred from the claim text.