Method for forming layer for trench isolation structure
AssigneeSamsung Electronics Co., Ltd.
InventorsDo-Hyung Kim, Sung-Eui Kim
Life of this patent
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Abstract
A method for forming a thermal oxide layer on the surface of a semiconductor substrate exposed during a semiconductor fabricating process. The thermal oxide layer is to be thin to minimize silicon substrate defects caused by volume expansion. A chemical vapor deposition (CVD) layer is then formed on the thin thermal oxide layer, creating a required thickness. The thin thermal oxide layer and the CVD material layer are formed in the same CVD apparatus. As a result, a process can be simplified and a particle-leading pollution can be prevented.
Claims28
A method for forming an oxide layer in an integrated circuit device process, comprising:
- growing a thermal oxide layer on a surface of a semiconductor substrate in a chemical vapor deposition (CVD) apparatus;
- and
- forming a CVD material layer on the thermal oxide layer in the CVD apparatus.
A method of forming an oxide layer in an integrated circuit device process, comprising:
- forming a thermal oxide layer on an exposed single crystalline silicon substrate in a chemical vapor deposition (CVD) apparatus;
- and
- forming a CVD material layer on the thermal oxide layer in the CVD apparatus.
A method of forming a layer for an integrated circuit device, comprising:
- forming a trench in a single crystalline silicon substrate by etching;
- forming a thermal oxide layer on a surface of the trench;
- forming a conformal liner material layer on the thermal oxide layer;
- and
- forming a nitride liner layer on the conformal liner material layer.
A method of forming an isolation trench, comprising,
- etching a single crystalline silicon substrate to form a trench therein;
- and
- forming all layers, formed in the trench, in the trench in the same chemical vapor deposition (CVD) apparatus.
A trench isolation structure comprising:
- a trench for device isolation formed in a semiconductor substrate to a predetermined depth;
- a thermal oxide layer formed on a bottom and a sidewall of the trench to a thickness of 20 Å to 100 Å;
- a chemical vapor deposition (CVD) material barrier layer formed on the thermal oxide layer to a thickness of 50 Å to 400 Å;
- a nitride liner layer formed on the CVD material barrier layer;
- and
- a trench isolation material layer formed on the nitride liner layer to fill up the trench.
Dependencies are inferred from the claim text.