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OwnerMasahiko Ando, Masahiro Kawasaki +1inventors
InventorsMasahiko Ando, Masahiro Kawasaki, Masatoshi Wakagi
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A gate electrode, a gate insulating layer, a semiconductor layer, a drain electrode, a source electrode and a passivation insulating layer are fabricated in turn on an insulating substrate, thereby forming a thin film transistor. The thin film transistor is designed in such a way that a silicon oxide film is employed as a second gate insulating layer adjacent to the semiconductor layer; a thickness of the silicon oxide film is set to the range of 0.5 to 3.0 nm; and it shows the characteristics in which when a stress voltage which is negative with respect to the drain electrode and the source electrode is applied to the gate electrode, the operating threshold voltage is reduced.
A thin film transistor, wherein a gate electrode, a gate insulating layer, a semiconductor layer, a drain electrode, a source electrode and a passivation insulating layer are fabricated in turn on an insulating substrate;
A thin film transistor, wherein a gate electrode, a gate insulating layer, a semiconductor layer, a drain electrode, a source electrode and a passivation insulating layer are fabrocated in turn on an insulating substrate;
Dependencies are inferred from the claim text.