Structure of critical dimension bar

A method of monitoring critical dimension deviation, used for a substrate having a plurality of dies and a test region between the dies, the method comprising steps of:

• forming a base layer on a portion of the substrate within the test region, and simultaneously forming a patterned base layer on the substrate within each of the dies, the base layer and the patterned base layer being made of same material and having same thicknesses, wherein a region outside the base layer within the test region being defined as a lower region;
• forming a patterned critical material layer covering the dies and the test region with equal uniform thickness, wherein the critical material layer on each of the die comprises a die pattern, the critical material layer on the base layer within the test region comprises a first test pattern, and the critical material layer on the lower region comprises a second test pattern, and the die pattern, the first and second test pattern are obtained from a die photomask pattern, a first test photomask pattern and a second test photomask pattern with equal pattern width;
• measuring critical dimensions of the first and the second test patterns;
• and
• comparing the measured critical dimensions of the first and the second test patterns for obtaining deviations in the critical dimensions of the die patterns.

A structure of critical dimension bar formed on a test region between a plurality of dies of a substrate, wherein a plurality of field oxide layers and a plurality of polygate lines are formed on the substrate within the dies, and a portion of the polygate line are formed on the field oxide layers, the structure comprising:

• a thermal oxide layer formed on a portion of the substrate within the test region, the thermal oxide layer having a thickness the same as the field oxide layer, and a region outside the thermal oxide within the test region being defined as lower region;
• a polysilicon layer formed on the substrate, a part of the polysilicon layer being formed on the thermal oxide layer with a thickness the same as the polygate line;
• and
• a portion of a patterned insulation layer, the insulation layer covering the die, the test region and the polysilicon layer with a uniform thickness;
• wherein
• the insulation layer on each of the dies, the polysilicon layer within the test region and the lower region respectively comprises a contact window type die pattern, a contact window type first test pattern and a contact window type second pattern, respectively transferred from a die photomask pattern, a first test photomask pattern and a second photomask pattern with equal pattern width.

A method of monitoring critical dimension deviation, used for a substrate having a plurality of dies and a test region between the dies, the method comprises steps of:

• forming a plurality of field oxide layers on the substrate within the dies and simultaneously forming a thermal oxide layer on a portion of the substrate within the test region, the thermal oxide layer having a thickness the same as the field oxide layer, and a region outside the thermal oxide within the test region being defined as lower region;
• forming a plurality of polygate lines on the substrate within the dies, and simultaneously forming a polysilicon layer on the thermal oxide layer with a thickness the same as the polygate line, and the polygate lines being formed across the field oxide layers;
• forming a patterned insulation layer on the dies, the test region and the polysilicon layer with a uniform thickness;
• wherein the insulation layer on each of the dies, the polysilicon layer within the test region and the lower region respectively comprises a contact window type die pattern, a contact window type first test pattern and a contact window type second pattern, respectively transferred from a die photomask pattern, a first test photomask pattern and a second photomask pattern with equal pattern width;
• measuring critical dimensions of the first and the second test patterns;
• and
• comparing the measurement results to obtain a deviation in critical dimension of the die pattern.

A structure of a critical dimension bar, formed on a test region a plurality of dies of a sustrate, wherein the substrate within each of the dies comprises a plurality of field oxide layers formed thereon and a plurality of polygate lines, a portion of the polygate lines across over the field oxide layers, the structure comprising:

• a thermal oxide layer, formed on a portion of the substrate within the test region with a thickness the same as the field oxide layer, and a region outside the thermal oxide within the test region being defined as lower region;
• a first patterned polysilicon layer, formed on the thermal oxide layer and comprising a first test pattern with a thickness the same as the polygate line;
• and
• a second patterned polysilicon layer, formed on the substrate within the lower region and comprising a second test pattern with a thickness the same as the polygate line;
• wherein
• the polygate lines, the first test pattern and the second test pattern are transferred from a die photomask pattern, a first test photomask pattern and a second test photomask pattern with an equal pattern width.

A method of monitoring critical dimension deviation, used for a substrate having a plurality of dies and a test region between the dies, the method comprises steps of:

• forming a plurality of field oxide layers on the substrate within the dies and simultaneously forming a thermal oxide layer on a portion of the substrate within the test region with a thickness the same as the field oxide layer, and a region outside the thermal oxide within the test region being defined as lower region;
• forming a plurality of polygate line on the dies and simultaneously forming a first patterned polysilicon layer on the thermal oxide layer and simultaneously forming a second patterned polysilicon layer, formed on the substrate within the lower region, wherein the polygate line are formed across the field oxide layers, the first patterned polysilicon layer comprises a first test pattern and the second patterned polysilicon layer comprises a second test pattern, the polygate lines, the first test pattern and the second test pattern are transferred from a die photomask pattern, a first test photomask pattern and a second test photomask pattern with an equal pattern width;
• measuring critical dimensions of the first and the second test patterns;
• and
• comparing the measurement results to obtain a deviation in critical dimension of the die pattern.

A method for fabricating a critical dimension bar on a test region between a plurality of dies of a substrate, the method comprising:

• forming a base layer on a portion of the substrate within the test region and on a portion of the sustrate of each of the dies with a uniform thickness, and a region outside the base layer within the test region being defined as a lower region;
• forming a conformal critical material layer on the dies and the test region;
• and
• performing a step of exposure to respectively transfer a die photomask pattern, a first test photomask pattern and a second photomask test pattern to form a die pattern on the critical material layer, a first test pattern on the base layer within the test region and a second test pattern on the lower region, wherein
• the die photomask pattern, the first and second test photomask pattern have the same pattern width.

A method of fabricating a critical dimension bar on a test regionbetween a plurality of dies of a substrate, the method comprising:

• forming a plurality of field oxide layers on the substrate within each of the dies and a thermal oxide layer on a portion of the substrate within the test region simultaneously, and a region outside the thermal oxide layer withing the test region being defined as a lower region;
• forming a plurality of polygate lines on each of the die, the polygate lines across the field oxide layers,and a polysilicon layer on the thermal oxide layer simultaneously;
• forming a conformal insulation layer on the dies and the test region;
• and
• using a photomask comprising a die photomask pattern, a first test photomask pattern and a second test photomask pattern to respectively form a die pattern on each of the dies, a first test pattern on the polygate lines within the test region, and a second test pattern in the insulating layer on the test region with a same pattern width.