Laminated structure and a method of forming the same

A method of forming a multi-layer structure, comprising:

• a step of forming a first poly-crystal silicon layer doped with impurities of one conductive type, on a surface of a processing target;
• a step of sequentially forming a second poly-crystal silicon layer containing no impurities of one conductive type, on the first poly-crystal silicon layer;
• and
• a step of sequentially forming a tungsten silicide layer containing no impurities of one conductive type, on the second poly-crystal silicon layer.

A method of forming a multi-layer structure, comprising:

• a step of forming a first poly-crystal silicon layer doped with first impurities of one conductive type at a uniform density distribution, on a surface of a processing target;
• a step of sequentially forming a second poly-crystal silicon layer on the first poly-crystal silicon layer, such that the second poly-crystal silicon layer is doped with impurities of the same conductive type as the first impurities, at a uniform distribution and at a density lower than a density of the first impurities;
• and
• a step of sequentially forming a tungsten silicide layer containing no impurities of one conductive type, on the second poly-crystal silicon layer.

A method of forming a multi-layer structure, comprising:

• a step of forming a first poly-crystal silicon layer doped with first impurities of one conductive type at a uniform density distribution, on a surface of a processing target;
• a step of sequentially forming a second poly-crystal silicon layer on the first poly-crystal silicon layer, such that the second poly-crystal silicon layer is doped with impurities of the same conductive type as the first impurities, at a uniform distribution and at a density higher than that of the first impurities;
• and
• a step of sequentially forming a tungsten silicide layer containing no impurities of one conductive type, on the second poly-crystal silicon layer.

A multi-layer structure comprising:

• a first poly-crystal silicon layer doped with impurities of one conductive type at a uniform density;
• a second poly-crystal silicon layer formed on the first poly-crystal silicon layer so as to have a direct contact therewith, and containing no impurities of one conductive type;
• and
• a tungsten silicide layer formed on the second poly-crystal silicon layer so as to have a direct contact therewith, and containing no impurities of one conductive type.

A multi-layer structure comprising:

• a first poly-crystal silicon layer doped with first impurities of one conductive type at a uniform density;
• a second poly-crystal silicon layer formed on the first poly-crystal silicon layer so as to have a direct contact therewith, and doped with impurities, at a uniform distribution and at a lower density than the density of the first impurities;
• and
• a tungsten silicide layer formed on the second poly-crystal silicon layer so as to have a direct contact therewith, and containing no impurities of a conductive type.

A multi-layer structure comprising:

• a first poly-crystal silicon layer doped with first impurities of one conductive type at a uniform density;
• a second poly-crystal silicon layer formed on the first poly-crystal silicon layer so as to have a direct contact therewith, and doped with impurities, at a uniform distribution and at a higher density than the density of the first impurities;
• and
• a tungsten silicide layer formed on the second poly-crystal silicon layer so as to have a direct contact therewith, and containing no impurities of one conductive type.