Semiconductor device and process for manufacturing the same, and electronic device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsHongyong Zhang, Satoshi Teramoto
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Abstract
An opening for separating elements is formed in self-alignment by making use of a pattern of electrodes. This eliminates the patterning margin which might otherwise be required for the element separation. Thus, the degree of integration of a thin film transistor circuit can be further raised.
Claims1
A method of manufacturing a semiconductor device having at least two thin film transistors adjacent to each other, each having an active layer and at least one source or drain electrode, wherein said method is characterized in that the active layer of the respective thin film transistors is separated from each other by patterning in a self-alignment manner using said source or drain electrode as a mask.
Dependencies are inferred from the claim text.