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US 2002/0001919 A1Published application
Method of forming partial reverse active mask
AssigneeUnited Microelectronics Corp.
InventorsComing Chen, Juan-Yuan Wu, Water Lur
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Abstract
A method of forming a partial reverse active mask. A mask pattern comprising a large active region pattern with an original dimension and a small active region pattern is provided. The large active region pattern and the small active region pattern are shrunk until the small active region pattern disappears. The large active region pattern enlarged to a dimension slightly smaller than the original dimension.
Claims9
A method of forming a partial reverse active mask, wherein the method is applied by a computer simulation, comprising:
- providing a mask pattern, comprising a large active region pattern with an original dimension and a small active region pattern;
- shrinking the large active region pattern and the small active region pattern until the small active region pattern disappears;
- after the shrinking step, enlarging the large active region pattern to a dimension slightly smaller than the original dimension;
- and
- using the enlarged large active region pattern to design a mask.
2 more elements
A method of forming a partial reverse active mask, comprising:
- providing a substrate, and forming therein a plurality of active regions and a plurality of openings;
- forming an insulating layer over the substrate, wherein a portion of the insulating layer on the active regions has a pyramidical profile;
- patterning the insulating layer using a partial reverse active mask to expose central parts of the active regions;
- removing the exposed insulating layer;
- and
- planarizing the remaining insulating layer to have the same surface of the openings.
3 more elements
Dependencies are inferred from the claim text.