Electrically programmable memory cell
AssigneeSTMicroelectronics S.r.l.
InventorsJoseph Borel, Jean-Pierre Schoellkopf, Constantin Papadas
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Abstract
The present invention relates to a method of manufacturing an electrically programmable memory cell with a lateral floating gate with respect to the control gate, including the steps of forming an insulated control gate on an active area; forming a thin insulating layer around the control gate; successively depositing a thin layer of a conductive material and a layer of an insulating material; anisotropically etching the insulating material to form spacers of this material; and removing the portions of the thin conductive layer which are not coated with the spacers.
Claims6
A method of manufacturing an electrically programmable memory cell with a floating gate lateral with respect to the control gate, including the steps of:
- forming an insulated control gate on an active area;
- forming a thin insulating layer around the control gate;
- successively depositing a thin layer of a conductive material and a layer of an insulating material;
- anisotropically etching the insulating material to form spacers of this material;
- and
- removing the portions of the thin conductive layer which are not coated with the spacers.
A memory cell with a control gate and a lateral floating gate, including, on the lateral walls of the control gate, insulating spacers under which is arranged a thin layer of a conductive material.
Dependencies are inferred from the claim text.