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US 2002/0001865 A1Published application
Antifuse structures with improved manufacturability
OwnerGuobiao Zhanginventor
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Abstract
An antifuse structure of the present invention comprises an antifuse layer and a bottom electrode which are immune to the damages caused by harmful processing environment. The three major components of the antifuse—the bottom electrode, the antifuse layer and the top buffer layer—are formed consecutively without any photolithography or etching step in-between. The top buffer layer is defined before the bottom electrode. This antifuse structure can substantially improve the antifuse manufacturability.
Claims12
A process for fabricating electrically programmable antifuse in an integrated circuit comprising the steps of:
- forming a bottom electrode, said bottom electrode comprising metallic materials;
- forming an antifuse layer, said antifuse layer overlaying and in contact with said bottom electrode, said antifuse layer being non-conductive when said antifuse is unprogrammed, said antifuse layer being conductive when said antifuse is programmed;
- forming a top buffer layer, said top buffer layer overlaying and contacting said antifuse layer, said top buffer layer comprising conductive materials;
- masking and etching said top buffer layer;
- and
- masking and etching said bottom electrode.
3 more elements
Dependencies are inferred from the claim text.