Solid-state magnetic memory

A solid-state magnetic memory comprising:

• a semiconductor substrate;
• ferromagnetic tunnel junction elements arrayed in a row direction and a column direction crossing the row direction and each comprising
• a magnetic recording layer, a magnetization direction of which is reversed by applying first and second magnetic fields thereto and changing a direction of the second magnetic field,
• a magnetization fixed layer facing the magnetic recording layer and configured to retain a magnetization direction thereof unchanged on applying the first and second magnetic fields, and
• a nonmagnetic layer intervening between the magnetic recording layer and the magnetization fixed layer;
• first wirings each extending in the column direction and arranged in the row direction, a unit consisting of two of the first wirings, two of first element groups positioned between the two of the first wirings, and one of the second wirings positioned between the two of the first element groups being repeated in the row direction, each of the first element groups comprising part of the ferromagnetic tunnel junction elements arranged in the column direction, and the first and second wirings being configured to generate the first magnetic field by causing currents to flow in the same direction through one of the first wirings and one of the second wirings adjacent to each other;
• third wirings positioned apart from the first and second wirings, each extending in the row direction and arranged in the column direction, the third wirings facing second element groups respectively, each of the second element groups comprising part of the ferromagnetic tunnel junction elements arranged in the row direction, and the third wirings being configured to generate the second magnetic field by causing a current to flow one of the third wirings;
• and
• diodes each formed in a surface region of the semiconductor substrate at least partially, each of the third wirings being electrically connected to one of the first wirings via one of the ferromagnetic tunnel junction elements and one of the diodes, the second wirings being electrically insulated from the first and third wirings, and forward directions of the diodes being equal to directions of current flows from the third wirings to the first wirings.

A solid-state magnetic memory comprising:

• a semiconductor substrate;
• a ferromagnetic tunnel junction element facing the semiconductor substrate and comprising
• a magnetic recording layer, a magnetization direction of which is reversed by applying first and second magnetic fields thereto and changing a direction of the second magnetic field,
• a magnetization fixed layer facing the magnetic recording layer and configured to retain a magnetization direction thereof unchanged on applying the first and second magnetic fields, and
• a nonmagnetic layer intervening between the magnetic recording layer and the magnetization fixed layer;
• a first wiring and a second wiring, the first and second wirings sandwiching the ferromagnetic tunnel junction element from both sides thereof, and the first and second wirings being configured to generate the first magnetic field by causing currents to flow in the same direction through the first and second wirings;
• a third wiring positioned apart from the first and second wirings, extending in the row direction and facing the ferromagnetic tunnel junction element, the third wiring being configured to generate the second magnetic field by causing a current to flow through the third wiring;
• and
• a diode formed in a surface region of the semiconductor substrate at least partially, the third wiring being electrically connected to the first wiring via the ferromagnetic tunnel junction element and the diode, and a forward direction of the diode being equal to a direction of current flow from the third wiring to the first wiring.