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US 2002/0000638 A1Published application
Semiconductor device and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorToshifumi Minami
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AssigneeKabushiki Kaisha Toshiba
InventorToshifumi Minami
Estimating the term…
In the fuse element structure of the semiconductor device, the first insulating film region is provided in a groove-like manner in the semiconductor substrate. Further, the fuse element is formed on the first insulating film region, and the second insulating film region is formed on the region on the fuse element and the first insulating film. The metal plug is connected to the fuse element, and the surface thereof is exposed to the surface of the second insulating film region. With this structure, the meltdown of the fuse by the laser blow is facilitated, and the area of the fuse is reduced. Thus, as the downsizing of the element is further advanced, it is possible to provide a fuse element structure capable of melting down a fuse without causing an affect on another fuse adjacent to the melted-down fuse with the scattering pieces thereof.
A semiconductor device comprising:
A semiconductor device comprising:
A method of manufacturing a semiconductor device comprising the steps of:
Dependencies are inferred from the claim text.