Semiconductor device having self-aligned contact and landing pad structure and method of forming same
AssigneeAgere Systems Guardian Corp.
InventorSEUNGMOO CHOI
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Abstract
A semiconductor integrated circuit device and method of forming same is disclosed and includes a silicon substrate having a field oxide region and spaced active region. First and second self-aligned contact window openings are associated with a respective field oxide region and active region. A dummy polysilicon landing pad is formed over the field oxide region and formed below the first self-aligned contact window opening. An operative polysilicon landing pad is formed above the dummy landing pad. A silicon nitride barrier layer is also formed during the process.
Claims18
A semiconductor integrated circuit device comprising:
- a silicon substrate having a field oxide region and a spaced active region formed therein;
- first and second self-aligned contacts formed in respective first and second self-aligned contact window openings that are associated with the respective field oxide region and active region;
- a dummy polysilicon landing pad formed over said field oxide region and formed below said first self-aligned contact window opening;
- and
- an operative polysilicon landing pad formed above said dummy landing pad.
A method of forming a semiconductor integrated circuit device comprising the steps of:
- forming a field oxide region and a spaced active region within a semiconductor substrate;
- forming first and second self-aligned contact window openings that are associated with the respective field oxide region and active region;
- forming a dummy polysilicon landing pad over the field oxide region and below the first self-aligned contact window opening;
- and
- forming an operative polysilicon landing pad above the dummy landing pad.
Dependencies are inferred from the claim text.