New complex of an element of transition group IV or V for forming an improved precursor combination
AssigneeInfineon Technologies AG
InventorsFrank Hintermaier, Ralf Metzger, Christoph Werner
Life of this patent
Estimating the term…
Abstract
A new complex of an element of transition group IV or V is provided for forming an improved precursor combination for use in chemical vapor deposition (CVD). This complex dispenses with an alkoxide ligand having an α proton, so that hydrolysis of the complex no longer liberates a reducing agent.
Claims4
A precursor combination for the deposition of SBT, comprising the compounds:
- Sr(thd)2(pmdeta);
- Bi(thd)3;
- and
- Ta(thd) (OtBu)4.
A precursor combination for the deposition of SBT, comprising the compounds:
- Sr(thd)2(tetraglyme);
- Bi(thd)3;
- and
- Ta(thd) (OtPe)4.
A precursor combination for the deposition of SBT, comprising the compounds:
- Sr(thd)2(pmdeta);
- Bi(thd)3;
- and
- Ta(thd) (OtPe)4.
A precursor combination for the deposition of SBT, comprising the compounds:
- Sr(thd)2(tetraglyme);
- Bi(thd)3;
- and
- Ta(thd) (OtBu)4.
Dependencies are inferred from the claim text.