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US 2001/0055863 A1Published application
Methods for manufacturing soi wafer and soi wafer
AssigneeShin-Etsu Handotai Co., Ltd.
InventorsMASATAKE NAKANO, KATSUO YOSHIZAWA
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AssigneeShin-Etsu Handotai Co., Ltd.
InventorsMASATAKE NAKANO, KATSUO YOSHIZAWA
Estimating the term…
The object of the invention is to reduce an outer circumferential edge removing width of the SOI wafer when a bonded SOI wafer is made and prevent deposition of polysilicon at the outer circumference of the SOI layer when an epitaxial layer is grown. An SOI layer is formed by the steps of forming an oxide film on a surface of at least one silicon wafer of two silicon wafers, bonding the other silicon wafer through said oxide film at a room temperature, the wafers are heat treated in oxidizing atmosphere, thereafter an outer periphery of a bond wafer is removed from an outer peripheral edge of the bond wafer up to a region between bonding ends through bonding at a room temperature and heat treatment bonding ends and making the bond wafer into a thin film of desired thickness.
A method for manufacturing an SOI wafer characterized in that an SOI layer is formed by the steps of forming an oxide film on a surface of at least one silicon wafer of two silicon wafers, bonding the other silicon wafer through said oxide film at a room temperature, the wafers are heat treated in oxidizing atmosphere, thereafter an outer periphery of a bond wafer is removed from an outer peripheral edge of the bond wafer up to a region between bonding ends through bonding at a room temperature and heat treatment bonding ends and making the bond wafer into a thin layer of desired thickness.
A method for manufacturing an SOI wafer characterized in that an oxide film is formed on a surface of at least one silicon wafer of two silicon wafers, the other silicon wafer is bonded through said oxide film at a room temperature, the wafers are heat treated in oxidizing atmosphere, thereafter an outer periphery of a bond wafer is removed from an outer peripheral edge of the bond wafer up to a first region inside bonding ends through their bonding at a room temperature, a thickness of said bond wafer is reduced to a desired thickness to form an SOI layer, thereafter an outer periphery of said SOI layer is removed down to inside said first region.
An SOI wafer characterized in that a film thickness of an SOI layer is 1.5 μm or less and an angle formed by a surface near an outer peripheral end of SOI layer and an interface between an buried oxide layer and the SOI layer is approximately 2° or more.
A thin film SOI wafer etched in vapor phase characterized in that a film thickness of an SOI layer of said thin film SOI wafer is 1.5 μm or less and an outer periphery removing width is 3 mm or less.
Dependencies are inferred from the claim text.