Semiconductor device and method of fabricating the same
AssigneeKabushiki Kaisha Toshiba
InventorsHiroaki Yamada, Osamu Fujii
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Abstract
A high-resistance substrate with good RF characteristics, which has an interstitial oxygen concentration ([Oi]) of 8E17 cm−3 or less, an oxygen precipitate density ([BMD]) of 1E8 cm−3 or more, and a substrate resistivity of 500 Ω·cm or more is used. A heat-treating step of the device process is performed for 25 hrs or less as a value calculated assuming that the temperature is 1,000° C. This suppresses a decrease in the resistance of the substrate, prevents crystal defects such as slip, and improves the yield.
Claims7
A semiconductor device obtained by forming a circuit in a surface portion of a semiconductor substrate, wherein said semiconductor substrate has an interstitial oxygen concentration (to be referred to as [Oi] hereinafter) of not more than 8E17 cm−3, an oxygen precipitate density (to be referred to as [BMD] hereinafter) of not less than 1E8 cm−3, and a resistivity of not less than 500 Ω·cm.
A method of fabricating a semiconductor device by forming a circuit by using a semiconductor substrate, comprising the step of performing a heat-treating step of a device process for forming said circuit for not more than 25 hrs as a value calculated assuming that the temperature is 1,000° C., by using a semiconductor substrate having an [Oi] of not more than 8E17 cm−3, a [BMD] of not less than 1E8 cm−3, and a resistivity of not less than 500 Ω·cm.
Dependencies are inferred from the claim text.