Method of fabricating a dielectric antifuse structure

A method of fabricating dielectric antifuse structures, which comprises the following method steps:

• providing an oxide layer having first contact holes for contacts and second contact holes for antifuse structures;
• forming a dielectric layer on a surface of the oxide layer;
• applying an organic antireflection layer to the dielectric layer;
• applying a resist layer on the organic antireflection layer;
• lithographically patterning the resist layer, wherein the second contact holes remain covered with the resist layer;
• etching the organic antireflection layer through openings in the resist layer above the first contact holes and subsequently etching the oxide layer through openings in the organic antireflection layer for producing interconnect structures above the contacts;
• etching residues of the antireflection layer in the first contact holes;
• etching an uncovered part of the dielectric layer in the first contact holes;
• removing the resist layer and underlying segments of the organic antireflection layer;
• and
• depositing a second conductive layer on the segments of the dielectric layer of the antifuse structures.