Method of manufacturing a semiconductor devices, embedding material for use therewith, and semiconductor device

A method of manufacturing a semiconductor device comprising the steps of:

• a hole pattern formation of forming hole patterns in an insulation film sandwiched between an upper conductive film and a lower conductive film, for electrically interconnecting the upper and lower conductive films;
• an organic polymeric embedding material coating of coating an organic polymeric embedding material used for uniformly embedding the hole patterns;
• coating an organic anti-reflective film over the organic polymeric embedding material film;
• coating a resist over the organic anti-reflective film;
• coating a resist pattern used for embedding interconnection trenches with embedding material on the resist through exposure;
• an etching of etching the organic anti-reflective film, the organic polymeric embedding material film and the insulation film a predetermined number of times while the resist pattern is taken as a mask;
• and
• removing the resist, the organic anti-reflective film and the organic polymeric embedding material, which have been left in said step of the etching, wherein
• the organic polymeric embedding material does not absorb the wavelength of exposing radiation used at the time of formation of the resist pattern, and the organic anti-reflective film absorbs the wavelength of exposing radiation.

A method of manufacturing a semiconductor device comprising the steps of:

• coating an insulation film laid on a lower conductive film with resist;
• forming on the resist, through exposure, a resist pattern for interconnection trenches;
• forming the interconnection trench pattern in the insulation film by means of etching the insulation film while the resist pattern is taken as a mask;
• a coating of applying, a plurality of times, organic polymeric embedding material used for uniformly embedding the hole patterns;
• coating a resist over the organic polymeric embedding material film;
• a hole pattern formation of forming hole patterns in the resist through exposure, the hole patterns being in the insulation film sandwiched between an upper conductive film and a lower conductive film, for electrically interconnecting the upper conductive film and the lower conductive film;
• an etching of etching the organic polymeric embedding material film and the insulation film while the hole patterns are taken as masks;
• and
• a removal of removing the resist and the organic polymeric embedding material, which have been left in the etching step.