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US 2001/0044209 A1Published application
Method for modification of polishing pattern dependence in chemical mechanical polishing
OwnerDavid Russell Evansinventor
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Abstract
A method of CMP includes forming a CMP slurry containing cerium oxide; adding a slurry modifier to the slurry, wherein the slurry modifier polishes low structure areas at a substantially zero rate and polishes high structure areas at a rate approximating a blanket polishing rate; and polishing a structure using the modifier-contained slurry.
Claims9
A method of CMP comprising:
- forming a CMP slurry containing cerium oxide;
- adding a slurry modifier to the slurry, wherein the slurry modifier polishes low structure areas at a substantially zero rate and polishes high structure areas at a rate approximating a blanket polishing rate;
- and
- polishing a structure using the modifier-contained slurry.
1 more element
A method of CMP comprising:
- forming a CMP slurry containing cerium oxide at a concentration of between about 1% and 50% by weight;
- adding a slurry modifier to the slurry, wherein the slurry modifier polishes low structure areas at a substantially zero rate and polishes high structure areas at a rate approximating a blanket polishing rate;
- and
- polishing a structure using the modifier-contained slurry.
1 more element
A method of CMP comprising:
- forming a CMP slurry containing cerium oxide at a concentration of between about 1% and 50% by weight;
- adding ethylene glycol at a concentration of up to 50% for polishing low structure areas at a substantially zero rate and polishing high structure areas at a rate approximating a blanket polishing rate;
- and
- polishing a structure using the slurry.
1 more element
Dependencies are inferred from the claim text.