Isolation structure and process therefor
AssigneeMicron Technology, Inc.
InventorsRichard Lane, Randhir Thakur
Life of this patent
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Abstract
A novel shallow-trench isolation (STI) structure and process for forming it is described. More particularly, a recess is formed in a semiconductor substrate. An oxide layer is formed in the recess using thermal oxidation or high-pressure oxidation. If the oxide layer is formed by high-pressure oxidation, then a nitrogen containing gas may be flowed into a high-pressure oxidation chamber to add nitrogen to the oxide layer. The recess may then be filled with a dielectric layer by a deposition process. Alternately, the dielectric layer may be formed using high-pressure oxidation.
Claims43
A process for forming an isolation structure for enhanced electrical isolation of devices, comprising:
- providing a semiconductor layer;
- forming conductive regions in said semiconductor layer;
- forming a recess in said semiconductor layer between said conductive regions, said recess having a sidewall and a bottom surface;
- oxidizing at least a substantial portion of said semiconductor layer adjacent to said recess to provide a first dielectric layer, said first dielectric layer formed using high-pressure oxidation, said first dielectric layer encroaching into said conductive regions;
- and
- at least substantially filling said recess with at least a portion of a second dielectric layer.
A process for forming an isolation structure, comprising:
- providing a substrate assembly;
- forming a plurality of recesses in said substrate assembly;
- forming a first dielectric layer in said recesses using high-pressure oxidation;
- and
- forming a second dielectric layer extending into said recesses.
A process for forming a shallow trench isolation structure, comprising:
- providing a substrate;
- forming a recess in said substrate, said recess having a sidewall and a bottom surface;
- implanting said recess;
- forming a first dielectric layer from said sidewall and said bottom surface using high-pressure oxidation;
- and
- forming a second dielectric layer extending into said recess.
A process for forming a shallow trench isolation structure between active areas formed in a substrate assembly, comprising:
- forming a recess between said active areas in said substrate assembly;
- forming a first dielectric layer in said recess using oxidation to encroach into said active areas;
- and
- forming a second dielectric layer extending into said recess using high density plasma deposition.
Dependencies are inferred from the claim text.