Resist composition and patterning process
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsHideto Kato, Kazuhiro Nishikawa, Yoshinori Hirano, Katsuya Takemura
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Abstract
A resist composition comprising (A) an alkali-insoluble or substantially insoluble polymer having acidic functional groups protected with acid labile groups, which polymer becomes alkali-soluble upon elimination of the acid labile groups, (B) a photoacid generator, and (C) a 1,2-naphthoquinonediazidosulfonyl group-bearing compound has a high resolution and sensitivity, and provides resist patterns of excellent plating resistance when used in UV lithography at an exposure light wavelength of at least 300 nm.
Claims7
A resist composition for exposure to ultraviolet light having a wavelength of at least 300 nm, comprising:
- (A) an alkali-insoluble or substantially insoluble polymer having acidic functional groups protected with acid labile groups, which polymer becomes alkali-soluble upon elimination of the acid labile groups;
- (B) a photoacid generator;
- and
- (C) a 1,2-naphthoquinonediazidosulfonyl group-bearing compound.
Dependencies are inferred from the claim text.