X-ray exposure apparatus
AssigneeCanon Kabushiki Kaisha
InventorsYutaka Watanabe, Mitsuaki Amemiya
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AssigneeCanon Kabushiki Kaisha
InventorsYutaka Watanabe, Mitsuaki Amemiya
Estimating the term…
An X-ray exposure apparatus has a plasma X-ray source for generating X-rays by producing a plasma, and a collimator for converging X-rays that diverge from the X-ray source and reducing a global divergence angle to irradiate a mask with the X-rays. A local convergence angle as seen from one point on the mask is changed by moving the position or angle of the collimator in a direction perpendicular or parallel to the axis of the collimator. The pattern on the mask is transferred to a wafer using X-rays having a convergence angle thus controlled. As a result, controllable parameters are increased and a more suitable resist pattern can be obtained. In addition, process tolerance in terms of exposing finer patterns is improved.
An X-ray exposure apparatus comprising:
A method of controlling an X-ray exposure apparatus having a plasma X-ray source for generating X-rays, and a collimator for reducing a global divergence angle of X-rays that diverge from said X-ray source, and irradiating a reticle with the X-rays, said method comprising:
A method of manufacturing devices, comprising steps of:
A semiconductor manufacturing plant, comprising:
A method of maintaining an X-ray exposure apparatus, comprising the steps of:
Dependencies are inferred from the claim text.