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US 2001/0042900 A1Published application
Bipolar transistor in which impurities are introduced from emitter electrode material to form emitter region
AssigneeNEC Corporation
InventorHiroshi Kato
Life of this patent
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Abstract
A first insulating film 4 having a first opening portion is formed on an emitter region 10 and a second insulating film 6 having a second opening portion smaller than the first opening portion is formed on the first insulating film 4. The first and second opening portions are buried with emitter electrode material 9 doped with impurities.
Claims5
A bipolar transistor comprising:
- an emitter region formed in a base region;
- a first insulating film formed on said emitter region so as to have a first opening portion provided on said emitter region;
- and
- a second insulating film formed on said first insulating film so as to have a second opening portion smaller than said first opening portion provided on said first opening portion, wherein emitter electrode material doped with impurities is buried in said first and second opening portions.
1 more element
Dependencies are inferred from the claim text.