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US 2001/0041447 A1Published application
Method and system for copper interconnect formation
AssigneeAdvanced Micro Devices, Inc.
InventorTAKESHI NOGAMI
Life of this patent
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Abstract
A system and method for reducing contamination in a semiconductor device formed on a substrate is disclosed. The method and system include providing a barrier metal layer on the substrate. A first portion of the barrier metal layer is thinner than a second portion of the barrier metal layer. The method and system further include removing the first portion of the barrier metal layer.
Claims13
A method for reducing contamination in a semiconductor device formed on a substrate comprising the steps of:
- providing a barrier metal layer on the substrate, a first portion of the barrier metal layer being thinner than a second portion of the barrier metal layer;
- and
- removing the first portion of the barrier metal layer.
A system for reducing contamination in a semiconductor device formed on a substrate comprising:
- means for providing a barrier metal layer on the substrate, a first portion of the barrier metal layer being thinner than a second portion of the barrier metal layer;
- and
- means for removing the first portion of the barrier metal layer.
Dependencies are inferred from the claim text.