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US 2001/0041439 A1Published application
Low temperature reflow method for filling high aspect ratio contacts
AssigneeMicron Technology, Inc.
InventorsShubneesh Batra, Gurtej Sandhu
Life of this patent
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Abstract
Impurities are added to a conductor layer in a semiconductor process to prevent formation of void spaces and encourage complete filling of contacts. The impurities reduce the melting point and surface tension of a conductor layer, thereby improving filling characteristics during a reflow step. The impurities may be added at any time during the process, including during conductor deposition and/or reflow.
Claims29
A method of processing a semiconductor substrate, comprising the steps of:
- providing a semiconductor substrate having a surface with a contact formed therein;
- depositing a conductor layer on the semiconductor substrate surface, wherein said conductor layer comprises a conductor;
- forming an impurity layer in said conductor layer, said impurity layer having a melting point temperature and surface tension less than that of said conductor;
- and
- heating the conductor layer to a reflow temperature, said reflow temperature being sufficient to cause the layers to reflow.
2 more elements
A process for semiconductor metallization, comprising the steps of:
- providing a semiconductor wafer having a contact formed therein;
- depositing a metal layer on the semiconductor wafer surface, said metal layer comprising a metal and having an exterior surface;
- exposing the exterior surface of the metal layer to a sufficient amount of an layer having a melting point temperature and surface tension less than that of said metal;
- and
- heating the metal layer to a reflow temperature, said reflow temperature being sufficient to cause the layers to reflow.
2 more elements
A semiconductor device, comprising:
- a semiconductor substrate having a first layer;
- a contact formed in the first layer of the semiconductor substrate;
- a conductor layer formed to extend into said contact, wherein said conductor layer comprises a conductor;
- and
- an impurity layer in said conductor layer, said impurity layer comprising a mixture of the conductor and an impurity, said impurity layer having a melting point temperature and surface tension less than that of said conductor.
2 more elements
Dependencies are inferred from the claim text.