Method for forming a spacer for semiconductor manufacture
AssigneeMicron Technology, Inc.
InventorsNanseng Jeng, Christophe Pierrat
Life of this patent
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Abstract
This invention teaches methods and apparatus for forming self-aligned photosensitive material spacers about protruding structures in semiconductor devices. One embodiment of the invention is a method for forming a LDD structure, utilizing disposable photosensitive material spacers. A second embodiment of the invention comprises a method for forming a transistor, having salicided source/drain regions, utilizing photosensitive polyimide spacers for forming the salicided source/drain regions, without disposing of the spacers. A third embodiment of the invention comprises a method for creating an offset from a protruding structure on a semiconductor substrate, using disposable photosensitive material spacers.
Claims30
A method of forming a spacer about edges of a protruding structure, which is part of a semiconductor device, comprising the steps of:
- a) coating the device with a layer of photosensitive material;
- and
- b) exposing the photosensitive material and developing it in a controlled manner such that self aligned photosensitive material spacers are formed about the edges of the structure.
A method for forming a LDD structure on a semiconductor wafer, utilizing disposable photosensitive material spacers, comprising the steps of:
- a) forming at least one gate on the semiconductor wafer, over a defined active device area;
- b) forming at least one photosensitive material spacer alongside the gate;
- c) implanting a first dose of ions into the active device areas;
- d) removing the photosensitive material spacers;
- and
- e) implanting a second dose of ions into the active device areas.
A method for forming a transistor having salicided source/drain regions on a semiconductor wafer, comprising the steps of:
- a) forming at least one gate on the semiconductor wafer, over a defined active area;
- b) doping the source/drain regions;
- c) forming at least one photosensitive material spacer alongside the gate;
- d) forming silicide on the source/drain regions;
- and
- e) depositing an insulator layer onto the semiconductor wafer.
A method for forming an offset from a structure on a semiconductor wafer, utilizing disposable spacers, comprising the steps of:
- a) forming at least one structure on the semiconductor wafer;
- b) forming at least one photosensitive material spacer alongside the structure;
- c) removing material from the wafer, which is not covered by the structure, or the spacer, and
- d) removing the spacer.
A method for forming a LDD structure on a semiconductor wafer, utilizing disposable photosensitive material spacers, comprising the steps of:
- a) forming at least one gate on the semiconductor wafer, over a defined active device area;
- b) implanting a first dose of ions into the active device areas;
- c) forming at least one photosensitive material spacer alongside the gate;
- d) implanting a second dose of ions into the active device areas;
- and
- e) removing the spacer.
Dependencies are inferred from the claim text.