Semiconductor device and method for manufacturing the same
AssigneeHyundai Eletronics Industries Co., Ltd.
InventorHa Zoong Kim
Life of this patent
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Abstract
A semiconductor device and method of manufacturing the semiconductor device including a semiconductor substrate of a first conductivity type. A scribe lane area formed in the substrate to define chip formation areas. A deep well area formed in each chip formation area. The deep well area has a second conductivity type which is opposite the first conductivity type. Also, at least one well area is formed within the deep well area.
Claims12
A semiconductor device comprising:
- a semiconductor substrate of a first conductivity type having chip formation areas, the semiconductor substrate including:
- scribe lanes formed therein to define chip formation areas;
- a deep well area formed in each chip formation area, each deep well area having a second conductivity type opposite the first conductivity type;
- and
- at least one well area formed within at least one deep well area.
A method for manufacturing a semiconductor device comprising:
- preparing a semiconductor substrate of a first conductivity type;
- forming scribe lanes in the semiconductor substrate, said scribe lanes defining chip formation areas;
- forming a deep well area in each chip formation area, each deep well area having a second conductivity type opposite the first conductivity type;
- and
- forming at least one well area within the deep well area.
The method of claim 6, further comprising forming a mask on the semiconductor substrate such that the deep well areas are formed in the chip formation areas and not in the scribe lanes.
Dependencies are inferred from the claim text.