Method of forming n-channel and p-channel MOS field effect transistors over a single semiconductor substrate

Abstract

The present invention provides a method of forming a diffusion region in a semiconductor region. The method comprises the steps of: carrying out a first ion-implantation of a first impurity of a first conductivity type into the semiconductor region to form an ion-implanted region which is in non-amorphous state, wherein first type clusters of the first impurity are formed in the ion-implanted region; carrying out a second ion-implantation of a second impurity of the first conductivity type into the ion-implanted region, wherein second type clusters of the first and second impurities are formed in the ion-implanted region; and carrying out a heat treatment for activating the first and second impurities in the ion-implanted region to change the ion-implanted region into a diffusion region.

Dependencies are inferred from the claim text.