Planar mixed SOI-bulk substrate for microelectronic applications
OwnerScott W. Crowder, Robert Hannon +1inventors
InventorsScott W. Crowder, Robert Hannon, Subramanian S. Iyer
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Abstract
A process for creating a substrate including bulk silicon regions and semiconductor-on-insulator regions. Regions of a surface of a bulk silicon substrate are recessed above regions where it is desired to create buried oxide regions in the substrate. Implant mask regions are formed on the surface of the substrate over regions where it is not desired to create buried oxide regions. Buried oxide regions are formed in the substrate under the recessed regions in the substrate. The implant mask regions are removed, leaving bulk silicon regions between the buried oxide regions
Claims19
A process for creating a substrate including bulk silicon regions and semiconductor-on-insulator regions, the process comprising:
- recessing regions of a surface of a bulk silicon substrate above regions where it is desired to create buried oxide regions in the substrate;
- forming implant mask regions on the surface of the substrate over regions where it is not desired to create buried oxide regions;
- forming buried oxide regions in the substrate under the recessed regions in the substrate;
- and
- removing the implant mask regions, leaving bulk silicon regions between the buried oxide regions.
A semiconductor substrate including bulk silicon and semiconductor-on-insulator regions, comprising:
- a bulk silicon substrate;
- buried oxide regions in the substrate;
- and
- bulk silicon regions between the buried oxide regions;
- wherein an upper surface of the substrate is planar.
Dependencies are inferred from the claim text.