Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device comprising the steps of:

• laminating a semiconductor wafer having a plurality of semiconductor elements on a first surface thereof onto a first wafer holding substrate by using a first adhesive so as to contact said first surface to said first wafer holding substrate;
• grinding a second surface of said semiconductor wafer on which the semiconductor elements are not formed to form a semiconductor wafer of a prescribed thickness;
• coating a first conductive layer on the whole second surface of said semiconductor wafer;
• selectively forming a second conductive layer on said first conductive layer in regions aligning to the semiconductor elements formed an said first surface of said semiconductor wafer;
• selectively etching the first conductive layer by using the selectively formed second conductive layer as a mask, laminating a second wafer holding substrate on the second conductive layer by using a second adhesive, which is a conductor;
• melting the first adhesive to peel off the first wafer holding substrate from the semiconductor wafer and expose the surface of the semiconductor wafer;
• selectively etching the semiconductor wafer from the exposed surface so as to be separated into semiconductor elements and partially expose the second adhesive surface,
• evaluating the semiconductor elements so as to be sorted into non-defectives and defectives;
• and
• removing the second adhesive to peel off the second wafer holding substrate from the second conductive layer.