Method of forming shallow trench isolation
OwnerKeita Kumamotoinventor
Life of this patent
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Abstract
The method of structuring shallow trench isolations is accomplished by forming mask patterns containing openings in semiconductor substrate; forming trenches on the semiconductor substrate by using openings; filling in openings and trenches with first silicon oxide film. A second silicon oxide film is formed and etched back after removing the mask patterning to form side walls on the side walls of first silicon oxide film. Then, the first silicon oxide film is removed from the element region after performing ion doping of element region to facilitate the formation of transistors.
Claims13
A method of forming a trench isolation comprising:
- forming a mask pattern with a plurality of openings on a semiconductor substrate;
- forming a plurality of trenches by etching said semiconductor substrate using said mask pattern as a mask;
- forming a first insulating film in said trenches and said openings;
- removing said mask pattern;
- and
- forming second insulating films on each side wall of said first insulating film.
A method of forming a trench isolation, comprising:
- forming a first insulating film on a semiconductor substrate;
- forming a second insulating film on said first insulating film;
- patterning said first and second insulating films to form an opening therethrough;
- forming a trench on said semiconductor substrate by using the pattern first and second insulating films as a mask;
- forming a third insulating film on surfaces of said semiconductor substrate exposed by said trench;
- forming a fourth insulating film in said trench and said opening;
- removing the patterned first and second insulating films so that said fourth insulating film has a projecting portion from surfaces of said semiconductor substrate;
- forming side walls of said projecting portion of said fourth insulating film;
- then conducting wet-etching.
A method of forming a trench isolation comprising:
- forming an oxide film on a semiconductor substrate;
- forming a nitride film on a semiconductor substrate;
- patterning said oxide and said nitride films to form a patterned layer;
- and
- then etching said semiconductor substrate by using said patterned layer as a mask to form a trench on said semiconductor substrate.
Dependencies are inferred from the claim text.