Method for manufacturing integrated structures including removing a sacrificial region

A method for manufacturing integrated structures, comprising the steps of:

• forming a wafer including at least a semiconductor material substrate and a sacrificial region;
• forming a semiconductor layer on the sacrificial region;
• forming a barrier layer on the semiconductor layer and over portions of the wafer lateral of the sacrificial region;
• forming an opening in the barrier layer over the semiconductor layer to expose an area of the semiconductor layer directly above the sacrificial region and leave barrier portions of the barrier layer laterally of the opening;
• forming an etching mask on the semiconductor layer through the opening and on the barrier regions;
• forming a hole through the etching mask and semiconductor layer;
• and
• removing said sacrificial region through the hole while using said etching mask to protect the semiconductor layer, wherein said etching mask comprises silicon carbide or titanium nitride.